Field effect transistor device and fabrication

ABSTRACT

In one aspect of the present invention, a field effect transistor (FET) device includes a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer, a second FET including a second portion of the first metal layer disposed on the dielectric layer, and a boundary region separating the first FET from the second FET.

CROSS-REFERENCE TO RELATED APPLICATIONS

This is a divisional application of application Ser. No. 12/754,917, filed Apr. 6, 2010, now U.S. Pat. No. 8,435,878, which is incorporated by reference herein.

FIELD OF INVENTION

The present invention relates to field effect transistor devices.

DESCRIPTION OF RELATED ART

Field effect transistor (FET) devices including complimentary metal oxide semiconductors (CMOS) include source regions, drain regions, and gate regions of n-type and p-type devices. In some devices the nFET gates and pFET are connected in fabrication, which affects the voltage characteristics of the devices.

BRIEF SUMMARY

In one aspect of the present invention, a field effect transistor (FET) device includes a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer, a second FET including a second portion of the first metal layer disposed on the dielectric layer, and a boundary region separating the first FET from the second FET.

In another aspect of the present invention, a field effect transistor (FET) device includes a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer, a second FET including a second portion of the first metal layer disposed on the dielectric layer, and a boundary region separating the first FET from the second FET, wherein the boundary region includes a portion of the dielectric layer.

Additional features and advantages are realized through the techniques of the present invention. Other embodiments and aspects of the invention are described in detail herein and are considered a part of the claimed invention. For a better understanding of the invention with the advantages and the features, refer to the description and to the drawings.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

The subject matter which is regarded as the invention is particularly pointed out and distinctly claimed in the claims at the conclusion of the specification. The forgoing and other features, and advantages of the invention are apparent from the following detailed description taken in conjunction with the accompanying drawings in which:

FIGS. 1-5 illustrate an exemplary method for forming a field effect transistor (FET) device.

FIGS. 6-8 illustrate an alternate exemplary method for forming a FET device.

DETAILED DESCRIPTION

FIGS. 1-5 illustrate an exemplary method for forming a field effect transistor (FET) device. Referring to FIG. 1, a silicon substrate 100 includes regions 102 and 104. In the illustrated example, the region 102 is doped to form a substrate region for a n-type metal oxide semiconductor (nMOS) device, and the region 104 has been doped to form a substrate region for a p-type device (pMOS). A dielectric layer 106 is formed on the substrate 100. The dielectric layer may include a high-K dielectric material such as, for example, hafnium silicate, hafnium dioxide, zirconium silicate, or zirconium dioxide. A first metal layer 108 is formed on the dielectric layer 106. The first metal layer 108 may include, for example TiN, TiN doped with Aluminum or Aluminum Oxide.

FIG. 2 illustrates the resultant structure following the removal of a portion of the first metal layer 108 to expose a portion of the dielectric layer 106. The portion of the first metal layer 108 may be removed by, for example, a lithographic etching process or another suitable etching process.

FIG. 3 illustrates the resultant structure following the formation of a second metal layer 302 over the exposed dielectric layer 106 and the first metal layer 108. The second metal layer 302 may include, for example, TiN, TiN doped with Lanthanum, Lanthanum Oxide, Lutetium, or Lutetium Oxide.

FIG. 4 illustrates the resultant structure following the removal of a portion of the first metal layer 108 and a portion of the second metal layer 302 that exposes a portion of the dielectric layer 106, and defined a boundary region 402.

FIG. 5 illustrates the resultant structure following the formation of a capping layer 502 over the second metal layer 302 of the devices and the boundary region 402. The capping layer 502 may include, for example, an amorphous silicon material or metal material, such as W, TiN, or Al.

The formation of the boundary region 402 electrically disconnects the nMOS device 501 from the pMOS device 503. The voltage thresholds (Vt) of the devices may be effected when the devices are connected. The separation allows the voltage threshold (Vt) of each device to be tuned to design specifications.

FIGS. 6-8 illustrate an alternate exemplary method for forming similar devices as described above. The alternate exemplary method includes similar methods as described above in FIGS. 1-3, where the dielectric layer 106 is formed on the substrate 100; a first metal layer 108 is formed and patterned on the first dielectric layer 106; and a second metal layer 302 is formed on the first dielectric layer 106 and the first metal layer 108. Referring to FIG. 6, a capping layer 602 is formed on the second metal layer 302. The capping layer 602 is similar to the capping layer 502 (of FIG. 5) described above.

FIG. 7 illustrates the resultant structure following the patterning and removal of portions of the capping layer 602, the second metal layer 302, and the first metal layer 108, which exposes a portion of the dielectric layer 106, and defines a boundary region 702.

FIG. 8 illustrates the resultant structure following the formation of a conductive layer 802 on the boundary region 702 and the capping layer 602. The conductive layer 802 includes, for example, a metallic or polysilicon material, and is operative to electrically connect the gate regions of the nFET 801 and pFET devices 803.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms “comprises” and/or “comprising,” when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one ore more other features, integers, steps, operations, element components, and/or groups thereof.

The corresponding structures, materials, acts, and equivalents of all means or step plus function elements in the claims below are intended to include any structure, material, or act for performing the function in combination with other claimed elements as specifically claimed. The description of the present invention has been presented for purposes of illustration and description, but is not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the invention. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.

The diagrams depicted herein are just one example. There may be many variations to this diagram or the steps (or operations) described therein without departing from the spirit of the invention. For instance, the steps may be performed in a differing order or steps may be added, deleted or modified. All of these variations are considered a part of the claimed invention.

While the preferred embodiment to the invention had been described, it will be understood that those skilled in the art, both now and in the future, may make various improvements and enhancements which fall within the scope of the claims which follow. These claims should be construed to maintain the proper protection for the invention first described. 

What is claimed is:
 1. A field effect transistor (FET) device comprising: a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer; a second FET including a second portion of the first metal layer disposed on the dielectric layer; a boundary region separating the first FET from the second FET; and a capping layer arranged on the first FET device, the second FET device, and the boundary region.
 2. The device of claim 1, wherein the boundary region includes a portion of the dielectric layer.
 3. The device of claim 1, wherein the boundary region consists of a portion of the dielectric layer.
 4. The device of claim 1, wherein the first FET is a p-type device and the second FET is an n-type device.
 5. The device of claim 1, wherein the dielectric layer is a high-K layer, the first metal layer includes Al, and the second metal layer includes TiN.
 6. The device of claim 1, wherein the dielectric layer is a high-K layer.
 7. The device of claim 1, wherein the first metal layer includes Al.
 8. The device of claim 1, wherein the second metal layer includes TiN.
 9. The device of claim 1, wherein the capping layer includes an amorphous silicon material.
 10. A field effect transistor (FET) device comprising: a first FET including a dielectric layer disposed on a substrate, a first portion of a first metal layer disposed on the dielectric layer, and a second metal layer disposed on the first metal layer; a second FET including a second portion of the first metal layer disposed on the dielectric layer; a boundary region separating the first FET from the second FET, wherein the boundary region includes a portion of the dielectric layer; and a capping layer arranged on the first FET device, the second FET device, and the boundary region.
 11. The device of claim 10, wherein the boundary region consists of the portion of the dielectric layer.
 12. The device of claim 10, wherein the first FET is a p-type device and the second FET is an n-type device.
 13. The device of claim 10, wherein the dielectric layer is a high-K layer, the first metal layer includes Al, and the second metal layer includes TiN.
 14. The device of claim 10, wherein the dielectric layer is a high-K layer.
 15. The device of claim 10, wherein the first metal layer includes Al.
 16. The device of claim 10, wherein the second metal layer includes TiN.
 17. The device of claim 10, wherein the capping layer includes an amorphous silicon material.
 18. The device of claim 10, further comprising a conductive layer arranged on the capping layer. 